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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1234| Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements | |
| EMMANUEL TORRES RIOS REYDEZEL TORRES TORRES EDMUNDO ANTONIO GUTIERREZ DOMINGUEZ | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| MOSFETs Scattering parameters measurement Semiconductor device modeling | |
| A procedure to analyze the effect of the MOSFET drain-bulk junction tunneling current at high frequencies is presented. This procedure allows identifying the presence of band-to-band tunneling in short channel-length MOSFETs at different drain-to-source voltages. Since this analysis is based on experimental S-parameters performed to a single MOSFET, the procedure is not affected by the variations occurring in devices with different geometries. Excellent correlation between simulated and experimental output impedance for a 0.1 lm channel-length bulk MOSFET up to 40 GHz demonstrates the validity of the proposed technique. | |
| Elsevier Ltd | |
| 2009 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Torres-Rios, E., et al., (2009). Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements, Solid-State Electronics (53): 145–149 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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| Fichero | Tamaño | Formato | |
|---|---|---|---|
| 13. Analysis of the impact of the drain.pdf | 443.8 kB | Adobe PDF | Visualizar/Abrir |