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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1491| Noise in micro-bolometers with silicon-germanium thermo-sensing layer | |
| ANDREY KOSAREV MARIO MORENO MORENO ALFONSO TORRES JACOME Sergey N. Rumyantsev ISMAEL COSME BOLAÑOS | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Silicon-germanium films Plasma deposition Electrical properties and measurements Electronic devices | |
| Low frequency noise in a-SixGey:H thermo-sensing films, on glass and in micro-bolometers of planar and sandwich structures based on the same material has been studied at different temperatures. The noise spectra had the form of the 1/f-like noise with the frequency exponent within the range of 0.8 to 1.6 depending on the sample and temperature. In the temperature range from T = 340 to 400 K the amplitude of the noise and current (at constant voltage) increased. These dependences can be described as a thermal activated process with energies of EaS/I = 0.63 eV and Eafilm = 0.34 eV for relative spectral noise density of the current fluctuations and DC current, respectively. | |
| Elsevier B.V. | |
| 2010 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Kosarev, A., et al., (2010). Noise in micro-bolometers with silicon-germanium thermo-sensing layer, Thin Solid Films, (518): 3310–3312 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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