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Study of optoelectronic characteristics in Germanium- Silicon films deposited by low frequency plasma and related devices
FRANCISCO TEMOLTZI AVILA
ANDREY KOSAREV
OLEKSANDR MALIK
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Photovoltaic cells
Amorphous semiconductors
Characteristics measurement
The thin film photovoltaic devices are considered as a promising alternative to conventional crystalline silicon solar cells because: 1) less material is needed per unit area to fully absorb the visible part of the solar spectrum (i.e., the thin film solar cells need intrinsic films with thickness of around ≈0.3𝜇𝑚 to fully absorb the visible part of the solar spectrum, whereas the dominant crystalline and polycrystalline silicon solar cells need intrinsic films with thickness of around ≈300𝜇𝑚), 2) can be fabricated photovoltaic modules of very large area in comparison with crystalline and polycrystalline silicon photovoltaic modules, 3) can be perform fabrication processes at low temperature using a wide variety of substrates (flexible, rigid, metals or insulators), films (contacts, buffers, active films, reflectors, etc.) and semiconductor materials (silicon, germanium, cadmium telluride, etc.) deposited by a variety of deposition techniques (PVD, CVD, ECD, plasma-based, hybrid, etc.), and 4) manufacturing and installation costs are significantly lower. Consequently, a wide variety of these technologies are being developed and marketed, including amorphous silicon, polymorphous silicon, microcrystalline silicon, polycrystalline silicon, silicon-germanium alloys, cadmium-telluride alloys, copper-indium-gallium-selenium alloys, organic materials, etc. These developments have made it necessary a better understand of the physics of the thin film solar cell devices. However, at present there are still many important issues that have not been studied enough.
Instituto Nacional de Astrofísica, Óptica y Electrónica
2014
Tesis de doctorado
Inglés
Estudiantes
Investigadores
Público en general
Temoltzi-Avila F.
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Aparece en las colecciones: Doctorado en Electrónica

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