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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1685| On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition | |
| ENRIQUE QUIROGA GONZALEZ MARIANO ACEVES MIJARES ZHENRUI YU ROSA ELVIA LOPEZ ESTOPIER KARIM MONFIL LEYVA | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Multilayers Silicon rich oxide Nanoparticles Photoluminescence Low-pressure chemical vapor deposition Transmission electron microscopy | |
| The photoluminescence emission of multilayer structures composed of layers of silicon rich oxide with high silicon content and layers of silicon rich oxide with low silicon content obtained by low pressure chemical vapor deposition is here presented. Different parameters for the preparation of the multilayers have been varied such as the Si concentration and the thicknesses of the layers. Additionally, the samples were oxidized at different temperatures. For all samples the photoluminescence seems to have the same origin: defects in the oxide matrix and defects at the interfaces between the Si nanocrystals. The structural and compositional properties of the multilayer structures are discussed. | |
| Elsevier B.V. | |
| 2011 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Quiroga-González, E., et al., (2011). On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition, Thin Solid Films, (519): 8030–8036 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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