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Issue DateTitlePublication Type/ Resource TypeAuthor(s)Submit Date
Apr-2007The physical reason of intense electroluminescence in ITO–Si heterostructuresArtículoOLEKSANDR MALIK; Arturo I. Martinez; FRANCISCO JAVIER DE LA HIDALGA WADE20-Feb-2018
Jan-2007Fabrication and performance comparison of planar and sandwich structures of micro-bolometers with Ge thermo-sensing layerArtículoMARIO MORENO MORENO; ANDREY KOSAREV; ALFONSO TORRES JACOME; ROBERO CARLOS AMBROSIO LAZARO19-Feb-2018
Jan-2007Study of GeySi1 − y:H films deposited by low frequency plasmaArtículoANDREY KOSAREV; ALFONSO TORRES JACOME12-Mar-2018
2008Efficient ITO–Si solar cells and power modules fabricated with a low temperature technology: Results and perspectivesArtículoOLEKSANDR MALIK; FRANCISCO JAVIER DE LA HIDALGA WADE; CARLOS ZUÑIGA ISLAS; GUILLERMO RUIZ TABOADA23-Apr-2018
2008Comparison of three un-cooled micro-bolometers configurations based on amorphous silicon–germanium thin films deposited by plasmaArtículoMARIO MORENO MORENO; ANDREY KOSAREV; ALFONSO TORRES JACOME; ROBERO CARLOS AMBROSIO LAZARO19-Apr-2018
2008Pulse characteristics of silicon double barrier optical sensors with signal amplificationArtículoOLEKSANDR MALIK; FRANCISCO JAVIER DE LA HIDALGA WADE; CARLOS ZUÑIGA ISLAS26-Apr-2018
2008Digital output silicon optical sensorsArtículoOLEKSANDR MALIK; FRANCISCO JAVIER DE LA HIDALGA WADE; CARLOS ZUÑIGA ISLAS23-Apr-2018
2008Thermo-sensing silicon–germanium–boron films prepared by plasma for un-cooled micro-bolometersArtículoALFONSO TORRES JACOME; MARIO MORENO MORENO; ANDREY KOSAREV; AURELIO HORACIO HEREDIA JIMENEZ2-May-2018
2011Device application of non-equilibrium MOS capacitors fabricated on high resistivity siliconArtículoOLEKSANDR MALIK; FRANCISCO JAVIER DE LA HIDALGA WADE2-May-2019

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