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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2097| Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C | |
| Miguel Dominguez Pedro Rosales Quintero ALFONSO TORRES JACOME MARIO MORENO MORENO Joel Molina Reyes FRANCISCO JAVIER DE LA HIDALGA WADE CARLOS ZUÑIGA ISLAS Wilfrido Calleja Arriaga | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Thin-film transistor Hydrogenated amorphous Spin-On Glass Silicon–germanium | |
| In this paper, we study the ambipolar behavior of a-SiGe:H thin-film transistors fabricated at 200 °C. A sub-threshold slope and an on/off current ratio of 0.34 V/DEC and 10⁵, respectively, were measured for the n-type region, whereas values of 0.15 V/DEC and 10⁴ for were measured for the p-type region. We also obtained the characteristic energies for the deep localized states of the a-SiGe:H film, the flat-band voltages, and threshold voltages among other device parameters for the ambipolar thin-film transistors. | |
| Journal of Non-Crystalline Solids | |
| 2012 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Dominguez, Miguel, et al., (2012), Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C, Journal of Non-Crystalline Solids, Vol. 358:2340–2343 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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