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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1215| Intermixing of InP-based multiple quantum wells for integrated optoelectronic devices | |
| DANIEL ALBERTO MAY ARRIOJA ADALBERTO ALEJO MOLINA JOSE JAVIER SANCHEZ MONDRAGON | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| The intermixing characteristics of three widely used combinations of InP-based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique.We demonstrate that the bandgap energy shift is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusion at the interface between the barrier and well. According to our results, the InGaAsP/InGaAsP and InGaAs/InP are well suited for applications requiring a wide range of bandgap values within the same wafer. In the case of the InGaAs/InGaAsP system, its use is limited due to the significant broadening of the photoluminescence spectrum that was observed. The effect of the top InGaAs layer over the InP cladding is also investigated, which leads to a simple way to obtain three different bandgaps in a single intermixing step. | |
| Microelectronics Journal | |
| 2009 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| May Arrioja, D. A., et al., (2009). Intermixing of InP-based multiple quantum wells for integrated optoelectronic devices, Microelectronics Journal. Vol.40(3):574-576 | |
| OPTICA FÍSICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Óptica |
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