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Study of optoelectronic characteristics in Germanium- Silicon films deposited by low frequency plasma and related devices | |
FRANCISCO TEMOLTZI AVILA | |
ANDREY KOSAREV OLEKSANDR MALIK | |
Acceso Abierto | |
Atribución-NoComercial-SinDerivadas | |
Photovoltaic cells Amorphous semiconductors Characteristics measurement | |
The thin film photovoltaic devices are considered as a promising alternative to conventional crystalline silicon solar cells because: 1) less material is needed per unit area to fully absorb the visible part of the solar spectrum (i.e., the thin film solar cells need intrinsic films with thickness of around ≈0.3𝜇𝑚 to fully absorb the visible part of the solar spectrum, whereas the dominant crystalline and polycrystalline silicon solar cells need intrinsic films with thickness of around ≈300𝜇𝑚), 2) can be fabricated photovoltaic modules of very large area in comparison with crystalline and polycrystalline silicon photovoltaic modules, 3) can be perform fabrication processes at low temperature using a wide variety of substrates (flexible, rigid, metals or insulators), films (contacts, buffers, active films, reflectors, etc.) and semiconductor materials (silicon, germanium, cadmium telluride, etc.) deposited by a variety of deposition techniques (PVD, CVD, ECD, plasma-based, hybrid, etc.), and 4) manufacturing and installation costs are significantly lower. Consequently, a wide variety of these technologies are being developed and marketed, including amorphous silicon, polymorphous silicon, microcrystalline silicon, polycrystalline silicon, silicon-germanium alloys, cadmium-telluride alloys, copper-indium-gallium-selenium alloys, organic materials, etc. These developments have made it necessary a better understand of the physics of the thin film solar cell devices. However, at present there are still many important issues that have not been studied enough. | |
Instituto Nacional de Astrofísica, Óptica y Electrónica | |
2014 | |
Tesis de doctorado | |
Inglés | |
Estudiantes Investigadores Público en general | |
Temoltzi-Avila F. | |
ELECTRÓNICA | |
Versión aceptada | |
acceptedVersion - Versión aceptada | |
Aparece en las colecciones: | Doctorado en Electrónica |
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Fichero | Descripción | Tamaño | Formato | |
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TemoltziAvF.pdf | 5.15 MB | Adobe PDF | Visualizar/Abrir |