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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/220| Development of methodologies for characterization and modeling of devices for high frequency applications from small-signal S-parameters | |
| GERMAN ANDRES ALVAREZ BOTERO | |
| ROBERTO STACK MURPHY ARTEAGA REYDEZEL TORRES TORRES | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Heterojunction bipolar transistors S-parameters Device modeling | |
| Due to the growing interest for using devices fabricated in BiCMOS technologies for microwave applications, the development of reliable models that represent the performance of heterojunction bipolar transistor (HBT) in high frequencies, is increasingly necessary in the design of integrated circuits. To contribute in this research area, this dissertation focuses on the development of models for high-frequency simulation both compact and equivalent circuit. These models allow not only to deepen the understanding of the physical phenomena emerging in advanced bipolar technologies, but also represent an important contribution to the evolution of the design assisted by circuit simulators, and the development of new microwave applications. This dissertation is presented in a sequential way, from the study of the origin and physical interpretation of the losses associated with the required test structures for the measurement of small-signal parameters of HBTs. The resulting model that includes the parasitic effects introduced by the test structure shows that considering the effects emerging at high frequencies, such as the skin effect, a significant improvement is obtained in the de-embedding procedures. Thus, the development of this dissertation has contributed in improving the quality of de-embedding procedures, which directly affect the reliability of the measurement, characterization and modeling of BiCMOS devices. Subsequently, the effects associated with the distributed nature of the HBTs were carefully analyzed, allowing the development of a hybrid model, i.e., a model resulting by combining equivalent circuit model and a compact model. The model proposed in this dissertation, together with its corresponding parameter extraction methodology, allow to deepen in the understanding of the distributed effects that impact the electrical characteristics of an HBT’s input and output. The results show an excellent simulationexperiment correlation up to 60 GHz, extending the frequency limits of current models used for the design of multi-stage ICs. From the resulting hybrid models, once optimized, mentioned above, the impact on the power gain by not considering the appropriate characteristics of input and output is analyzed in this dissertation. This study was conducted for both common-emitter configuration as for common-base configuration. | |
| Instituto Nacional de Astrofísica, Óptica y Electrónica | |
| 2013-08 | |
| Tesis de doctorado | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Alvarez-Botero G.A. | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Doctorado en Electrónica |
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| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| AlvarezBoGA.pdf | 4.59 MB | Adobe PDF | Visualizar/Abrir |