Por favor, use este identificador para citar o enlazar este ítem:
http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2283| Electrical characterization of planarized a-SiGe:H Thin-film Transistors | |
| Miguel Dominguez Pedro Rosales Quintero ALFONSO TORRES JACOME | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Thin-film transistor Hydrogenated amorphous silicon–Germanium Low-temperature Spin-on glass Spice | |
| In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200°C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 10⁶ and off-current approximately of 0.3x10⁻¹² A. The results show an improvement of the electrical characteristics when are compared to those unplanarized devices fabricated at higher temperature. Moreover, the simulation of the device using a SPICE model is presented. | |
| Revista Mexicana de Física | |
| 2013-01 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Dominguez, M., et al., (2013). Electrical characterization of planarized a-SiGe:H Thin-film Transistors, Revista Mexicana de Física, Vol. 59(1):62–65 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
Cargar archivos:
| Fichero | Tamaño | Formato | |
|---|---|---|---|
| 188. Electrical Characterization of Planarized a-SiGe -H Thin-Film Transistors.pdf | 2.18 MB | Adobe PDF | Visualizar/Abrir |