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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2505| Self-Heating Effects on Nanometer SOI Transistors at High-Frequencies and Low Temperatures | |
| Jairo Méndez Villanueva | |
| Edmundo A Gutierrez D Dragica Vasileska | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| self-heating High Frequency SOI devices low temperature S-parameters | |
| Quantum computing is a rapidly-emerging technology that harnesses the laws of quantum mechanics to solve problems too complex for classical computers. Most quantum systems require quantum bits, or qubits, to operate at temperatures close to absolute zero. Cryogenic conditions are required because thermal energy can excite vibrational motion that could disturb quantum computing operations. The increasing interest in quantum computing has resulted in new challenges, among them the need to maintain stable cryogenic temperature for the qubits and the surrounding circuitry. One of the problems with devices operating at low temperatures is the issue of self- heating. Therefore, understanding both experimentally and theoretically the problems of self-heating in devices used in quantum computing applications is necessary. This dissertation achieves this using the Monte Carlo methodology to solve the Boltzmann Transport Equation self-consistently coupled with Poisson’s equation. Self-Heating is accounted for via the solution of the energy balance equations for the acoustic and optical phonons using the outer Gummel loop. This generalized solver allows one to calculate both static and dynamic characteristics of the device structure of interest. In this work transport in 45nm technology node, SOI devices is investigated at both room temperature and cryogenic temperatures. A room temperature study was performed for the purpose of understanding the reliability and high-frequency operation of this SOI device structure. The reliability concerns can persist at low temperatures and could affect the operation of quantum computers fabricated using Self-Heating Effects on Nanometer SOI Transistors at High-Frequencies and Low Temperatures this technology node. Our simulations experiments at room temperature suggest that self-heating does not affect the dynamic operation of the SOI device of interest. S-parameters calculated using the isothermal and thermal solver are almost identical. The situation changes at low temperatures where self-heating has a significant impact on the device transfer and output characteristics. For example, for input powers of 35 mW the incremental temperature can be as large as 40 K for a device operated at a nominal temperature of 80 K. This is a significant temperature increase and must be accounted for when modeling devices at low temperatures. | |
| Instituto Nacional de Astrofísica, Óptica y Electrónica | |
| 2023-03 | |
| Tesis de doctorado | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Méndez Villanueva, J., (2023), Self-Heating Effects on Nanometer SOI Transistors at High-Frequencies and Low Temperatures, Tesis de Doctorado, Instituto Nacional de Astrofísica, Óptica y Electrónica | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Doctorado en Electrónica |
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