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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/928| Wavelength dependence of the photo-electromotive-force effect in CdTe:V crystal with bipolar photoconductivity | |
| SERGUEI STEPANOV PONCIANO RODRIGUEZ MONTERO SVETLANA MANSUROVA SERGUEYEVNA | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| We report on detailed investigation of the photo-electromotive-force (photo-EMF) effect in semiconductor with bipolar photoconductivity of impurity type in a spectral region close to the fundamental absorption edge, where both the photoconductivity and the photo- EMF response reach their maxima. The experiments performed with CdTe:V crystal (ΔE ≈ 1.51 eV) in the spectral range of 826–853 nm show that dynamics of the photo-EMF signal formation in this crystal is governed by relaxation of slow majority photocarriers–holes with the life-time which goes down from ƭ ≈ 9 ls at 850 nm to ≈ 6.5 ls at 826 nm. The minority photocarriers (electrons), which contribute approximately 10% of the total photoconductivity, also demonstrate significant wavelength dependence of their diffusion length with LD ≈ 8.5 lm at 850 nm and ≈ 6.3 lm at 830 nm. The reported results show significant improvement in responsivity of the bipolar CdTe:V photo-EMF detector when it is operated at λ = 840 nm (by factor ≈ 2.5 as compared with that at 852 nm). | |
| Elsevier B.V. Science Direct | |
| 2007 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Stepanov, S., et al., (2007). Wavelength dependence of the photo-electromotive-force effect in CdTe:V crystal with bipolar photoconductivity, Optical Materials 29 (2007): 623–630 | |
| ÓPTICA | |
| Versión publicada | |
| publishedVersion - Versión publicada | |
| Aparece en las colecciones: | Artículos de Óptica |
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