Welcome to the Institutional Repository INAOE
Welcome to our Institutional Repository INAOE!
Our repository is a digital platform that contains all our academic, scientific, technological and innovation information, which is linked to the National Repository CONACYT following international standards set out in the Technical Guidelines for the construction of institutional repositories published by CONACYT.
Browsing by Subject 65 nm MOSFET
Showing results 1 to 1 of 1
|Issue Date||Title||Publication Type/ Resource Type||Author(s)||Submit Date|
|2010||Magneto-modulation of gate leakage current in 65 nm nMOS transistors: Experimental, modeling, and simulation results||Artículo||EDMUNDO ANTONIO GUTIERREZ DOMINGUEZ; JOEL MOLINA REYES; PEDRO JAVIER GARCIA RAMIREZ||11-Oct-2018|