Por favor, use este identificador para citar o enlazar este ítem:
http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1478| Magneto-modulation of gate leakage current in 65 nm nMOS transistors: Experimental, modeling, and simulation results | |
| EDMUNDO ANTONIO GUTIERREZ DOMINGUEZ JOEL MOLINA REYES PEDRO JAVIER GARCIA RAMIREZ | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| 65 nm MOSFET Gate leakage Magnetic field Em interference | |
| We introduce experimental results that reveal a small static and a slowly varying-dynamic magnetic field B induces a magneto-modulation of the gate leakage current of a 65 nm nMOSFET. For the case of a 100 mT (mili-Tesla) static B field a variation of the 6% (1.5 nA/27 nA) of the gate current is observed. For a 5 Hz slowly varying (±100 mT) square pulsed magnetic field, the gate current dynamic variation raises up to 18% (4.8 nA/27 nA). These experimental observations are explained in terms of space and time modulation of the two-dimensional surface inversion layer charge. The static B field dependent model is validated through Minimos-NT numerical simulations, while the dynamic B field experimental observations are reproduced with a SPICE macro-model, which uses the static device model as initial condition for the dynamic model. With this model we are able to predict the impact of small static and dynamic B fields on the gate leakage current and channel current interference of low-dimensional MOS transistors. We also propose this electro-magnetic experimental technique as an alternative for detailed exploration of the Si–SiO2 interface properties for 2 nm or thinner gate oxides, as well as for low-dimensional semiconductor devices. | |
| Elsevier Ltd. | |
| 2010 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Gutierrez-D, E.A., et al., (2010). Magneto-modulation of gate leakage current in 65 nm nMOS transistors: Experimental, modeling, and simulation results, Solid-State Electronics, (54): 1022–1026 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
Cargar archivos:
| Fichero | Tamaño | Formato | |
|---|---|---|---|
| 124.-E.pdf | 904.43 kB | Adobe PDF | Visualizar/Abrir |