Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1090
IR sensors based on silicon–germanium–boron alloys deposited by plasma: Fabrication and characterization
ANDREY KOSAREV
MARIO MORENO MORENO
ALFONSO TORRES JACOME
CARLOS ZUÑIGA ISLAS
Acceso Abierto
Atribución-NoComercial-SinDerivadas
We report the study of a fabrication process and characterization of a thermal IR sensor based on silicon–germanium–boron alloys (a-SixGeyBz:H) deposited by plasma at low temperature. The sensor is an un-cooled micro-bolometer fabricated with surface micromachining techniques and is fully compatible with the CMOS technology. The temperature dependence of conductivity δ(T) was measured in the sensor in order to calculate the activation energy, Ea, the temperature coefficient of resistance, TCR and the room temperature conductivity, δRT. Current–voltage characteristics, I(U), in darkness and under IR radiation were measured in the device in order to calculate its current responsivity, RI. Spectral noise density was measured and the micro-bolometer detectivity, D* was calculated. The thermal time constant of the micro-bolometer was also measured.
Elsevier B.V
2008
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Kosarev, A., et al., (2008). IR sensors based on silicon–germanium–boron alloys deposited by plasma: Fabrication and characterization, Journal of Non-Crystalline Solids (354): 2561–2564
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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