Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1226
A simple Al/SRO/Si structure with silicon nanoparticles as a UV and Vis photodetector
MARIANO ACEVES MIJARES
ALFREDO MORALES SANCHEZ
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Photodetector
Silicon rich oxide
Photocurrent
Silicon nanoparticles
Electrical properties
A photodetector that shows high photocurrent in the ultraviolet and visible wavelengths has been fabricated. The device consists of a metal-oxide-semiconductor (MOS)-like grid structure where the dielectric layer is a silicon-rich oxide (SRO) film. Its fabrication is completely compatible with silicon technology. SRO thin films with 1 to 12% silicon excess were deposited on silicon wafers by low pressure chemical vapour deposition technique. After thermal annealing, silicon nanoagglomerates were created. Current-voltage measurements in dark and under illumination conditions were done to test the devices.
Elsevier B.V.
2009
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Luna-López, J.A., et al., (2009). A simple Al/SRO/Si structure with silicon nanoparticles as a UV and Vis photodetector, Procedia Chemistry (1): 1171–1174
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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