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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1226| A simple Al/SRO/Si structure with silicon nanoparticles as a UV and Vis photodetector | |
| MARIANO ACEVES MIJARES ALFREDO MORALES SANCHEZ | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Photodetector Silicon rich oxide Photocurrent Silicon nanoparticles Electrical properties | |
| A photodetector that shows high photocurrent in the ultraviolet and visible wavelengths has been fabricated. The device consists of a metal-oxide-semiconductor (MOS)-like grid structure where the dielectric layer is a silicon-rich oxide (SRO) film. Its fabrication is completely compatible with silicon technology. SRO thin films with 1 to 12% silicon excess were deposited on silicon wafers by low pressure chemical vapour deposition technique. After thermal annealing, silicon nanoagglomerates were created. Current-voltage measurements in dark and under illumination conditions were done to test the devices. | |
| Elsevier B.V. | |
| 2009 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Luna-López, J.A., et al., (2009). A simple Al/SRO/Si structure with silicon nanoparticles as a UV and Vis photodetector, Procedia Chemistry (1): 1171–1174 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Appears in Collections: | Artículos de Electrónica |
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| 5. A simple Al-SRO-Si Structure.pdf | 166.8 kB | Adobe PDF | View/Open |