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A simple Al/SRO/Si structure with silicon nanoparticles as a UV and Vis photodetector | |
MARIANO ACEVES MIJARES ALFREDO MORALES SANCHEZ | |
Acceso Abierto | |
Atribución-NoComercial-SinDerivadas | |
Photodetector Silicon rich oxide Photocurrent Silicon nanoparticles Electrical properties | |
A photodetector that shows high photocurrent in the ultraviolet and visible wavelengths has been fabricated. The device consists of a metal-oxide-semiconductor (MOS)-like grid structure where the dielectric layer is a silicon-rich oxide (SRO) film. Its fabrication is completely compatible with silicon technology. SRO thin films with 1 to 12% silicon excess were deposited on silicon wafers by low pressure chemical vapour deposition technique. After thermal annealing, silicon nanoagglomerates were created. Current-voltage measurements in dark and under illumination conditions were done to test the devices. | |
Elsevier B.V. | |
2009 | |
Artículo | |
Inglés | |
Estudiantes Investigadores Público en general | |
Luna-López, J.A., et al., (2009). A simple Al/SRO/Si structure with silicon nanoparticles as a UV and Vis photodetector, Procedia Chemistry (1): 1171–1174 | |
ELECTRÓNICA | |
Versión aceptada | |
acceptedVersion - Versión aceptada | |
Appears in Collections: | Artículos de Electrónica |
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