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Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements
EMMANUEL TORRES RIOS
REYDEZEL TORRES TORRES
EDMUNDO ANTONIO GUTIERREZ DOMINGUEZ
Acceso Abierto
Atribución-NoComercial-SinDerivadas
MOSFETs
Scattering parameters measurement
Semiconductor device modeling
A procedure to analyze the effect of the MOSFET drain-bulk junction tunneling current at high frequencies is presented. This procedure allows identifying the presence of band-to-band tunneling in short channel-length MOSFETs at different drain-to-source voltages. Since this analysis is based on experimental S-parameters performed to a single MOSFET, the procedure is not affected by the variations occurring in devices with different geometries. Excellent correlation between simulated and experimental output impedance for a 0.1 lm channel-length bulk MOSFET up to 40 GHz demonstrates the validity of the proposed technique.
Elsevier Ltd
2009
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Torres-Rios, E., et al., (2009). Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurements, Solid-State Electronics (53): 145–149
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Aparece en las colecciones: Artículos de Electrónica

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