Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/125
A 2D simulation methodology for thermo-magnetics effects on tunneling mechanisms of nano-scaled MOS devices
GABRIELA ALEJANDRA RODRIGUEZ RUIZ
LIBRADO ARTURO SARMIENTO REYES
EDMUNDO ANTONIO GUTIERREZ DOMINGUEZ
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Semiconductor device models
Magnetic tunneling
Nanoelectronics
The development of a 2D numerical simulation methodology that accounts for thermal and magnetic effects on the gate tunneling current of nano-scaled MOSFETs, is the main goal of this thesis. The Schrödinger-Poisson coupled equation system is modified to account for the influence of a static magnetic field. The wavefunctions, which are the solution to the Schrödinger-Poisson coupled equation system, and the energy, are then obtained as a function of the magnetic field and temperature. Then, by considering open boundary conditions with the Perfectly Matched Layer-PML method and using the Tsu-Esaki direct tunneling model, the gate tunneling current under the influence of a magnetic field and temperature is calculated. By modifying the source files of the commercial GTS Framework device simulation tool to incorporate the new simulation methodology, the gate tunneling current is computed as a function of electrical bias, temperature and magnetic field. By doing so, and by sweeping the magnetic field from negative to positive values, it is found out that electrical charges tunneling, through the gate oxide, from the semiconductor to the gate terminal, are swept from left to right. Therefore, the proposed simulation methodology, accompanied with experimental results, is a very valuable tool to investigate non-homogeneous space distributed tunneling properties.
Instituto Nacional de Astrofísica, Óptica y Electrónica
2015-02
Tesis de doctorado
Inglés
Público en general
Rodriguez-Ruiz G.A.
ELECTRÓNICA
Appears in Collections:Doctorado en Electrónica

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