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A 2D simulation methodology for thermo-magnetics effects on tunneling mechanisms of nano-scaled MOS devices | |
GABRIELA ALEJANDRA RODRIGUEZ RUIZ | |
LIBRADO ARTURO SARMIENTO REYES EDMUNDO ANTONIO GUTIERREZ DOMINGUEZ | |
Acceso Abierto | |
Atribución-NoComercial-SinDerivadas | |
Semiconductor device models Magnetic tunneling Nanoelectronics | |
The development of a 2D numerical simulation methodology that accounts for thermal and magnetic effects on the gate tunneling current of nano-scaled MOSFETs, is the main goal of this thesis. The Schrödinger-Poisson coupled equation system is modified to account for the influence of a static magnetic field. The wavefunctions, which are the solution to the Schrödinger-Poisson coupled equation system, and the energy, are then obtained as a function of the magnetic field and temperature. Then, by considering open boundary conditions with the Perfectly Matched Layer-PML method and using the Tsu-Esaki direct tunneling model, the gate tunneling current under the influence of a magnetic field and temperature is calculated. By modifying the source files of the commercial GTS Framework device simulation tool to incorporate the new simulation methodology, the gate tunneling current is computed as a function of electrical bias, temperature and magnetic field. By doing so, and by sweeping the magnetic field from negative to positive values, it is found out that electrical charges tunneling, through the gate oxide, from the semiconductor to the gate terminal, are swept from left to right. Therefore, the proposed simulation methodology, accompanied with experimental results, is a very valuable tool to investigate non-homogeneous space distributed tunneling properties. | |
Instituto Nacional de Astrofísica, Óptica y Electrónica | |
2015-02 | |
Tesis de doctorado | |
Inglés | |
Público en general | |
Rodriguez-Ruiz G.A. | |
ELECTRÓNICA | |
Appears in Collections: | Doctorado en Electrónica |
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