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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1267| Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides | |
| JOEL MOLINA REYES FRANCISCO JAVIER DE LA HIDALGA WADE PEDRO ROSALES QUINTERO | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| In this paper, we report and compare the reliability results obtained for W-La 2 O 3 gated Metal-Oxide-Semiconductor (MOS) devices with those of HfO 2-based systems reported in literature. Reliability issues like stress-induced leakage current (SILC), interface-states generation (Dit), threshold voltage shift (ΔVth) and time to breakdown (t bd) were compared and analyzed for both dielectrics in order to obtain a more specific assessment of their resistance to electrical degradation and breakdown. | |
| IEEE | |
| 2008 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| J. Molina, et al., (2008). Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides, IEEE (978-1-4244-2540-2/08): 1-4 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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| 25. Reliability Characteristics --2008.pdf | 782.83 kB | Adobe PDF | Visualizar/Abrir |