Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1269
Photoconduction in silicon rich oxide films
JORGE ALBERTO LUNA LOPEZ
MARIANO ACEVES MIJARES
ALFREDO MORALES SANCHEZ
JOSE FRANCISCO JAVIER FLORES GRACIA
GODOFREDO GARCIA SALGADO
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH4 (silane) and N2O (nitrous oxide) as reactive gases at 700 °. The gas flow ratio, Ro = [N2O]/[SiH4] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to Ro = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies (~3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.
IOP Publishing
2009
Artículo
Inglés
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Público en general
Luna-López, J.A., et al., (2009). Photoconduction in silicon rich oxide films, XIX Latin American Symposium on Solid State Physics (SLAFES XIX) Journal of Physics: Conference Series 167 (012017): 1-5
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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