Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1417
DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films
ALFREDO MORALES SANCHEZ
MARIANO ACEVES MIJARES
Acceso Abierto
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Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 ◦C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths—across the SRO film— has been proposed to explain the EL behaviour in these devices.
IOP Publishing Ltd
2010
Artículo
Inglés
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Público en general
Morales-Sánchez, A., et al., (2010). DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films, Nanotechnology, Vol. 21 (085710): 1-5
ELECTRÓNICA
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acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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