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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1437| Topographic analysis of silicon nanoparticles-based electroluminescent devices | |
| ALFREDO MORALES SANCHEZ MARIANO ACEVES MIJARES JORGE MIGUEL PEDRAZA CHAVEZ | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Silicon rich oxide Silicon nanoparticles Metal-oxide semiconductor Conductive paths Electroluminescence | |
| Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO. | |
| Elsevier B.V. | |
| 2010 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Morales-Sánchez, A., et al., (2010). Topographic analysis of silicon nanoparticles-based electroluminescent devices, Materials Science and Engineering B (174): 123–126 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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