Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1437
Topographic analysis of silicon nanoparticles-based electroluminescent devices
ALFREDO MORALES SANCHEZ
MARIANO ACEVES MIJARES
JORGE MIGUEL PEDRAZA CHAVEZ
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Silicon rich oxide
Silicon nanoparticles
Metal-oxide semiconductor
Conductive paths
Electroluminescence
Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.
Elsevier B.V.
2010
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Morales-Sánchez, A., et al., (2010). Topographic analysis of silicon nanoparticles-based electroluminescent devices, Materials Science and Engineering B (174): 123–126
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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