Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1444
Photoluminescence enhancement through silicon implantation on SRO-LPCVD films
ALFREDO MORALES SANCHEZ
MARIANO ACEVES MIJARES
JORGE MIGUEL PEDRAZA CHAVEZ
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Silicon-rich oxide
Silicon-nanoparticles
Photoluminescence
Silicon implanted SRO
Photoluminescence (PL) properties of thin and thick silicon-rich oxide (SRO) and silicon implanted SRO (SI-SRO) films with different silicon excess fabricated by low pressure chemical vapor deposition (LPCVD) were studied. The effects of the annealing temperature and silicon implantation on the PL were also studied. Maximum luminescence intensity was observed with an annealing temperature of 1150 and 1100 ◦C for thin and thick SRO films, respectively. The PL intensity is strongly enhanced when SRO films are implanted with silicon, especially for thin SRO films. Thin SI-SRO films emit up to six times more than non-implanted films, meanwhile the PL in thick SI-SRO films is only improved less than two times. Therefore, thin SI-SRO films are an interesting alternative for applications such as the fabrication of efficient Si-nps based LEDs.
Elsevier B.V.
2010
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Morales-Sánchez, A., et al., (2010). Photoluminescence enhancement through silicon implantation on SRO-LPCVD films, Materials Science and Engineering B (174): 119–122
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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