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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1462| A novel Epsilon Near Zero (ENZ) tunneling circuit using microstrip technology for high integrability applications | |
| ALONSO CORONA CHAVEZ JOSE LUIS OLVERA CERVANTES | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| A novel compact Epsilon Near Zero (ENZ) tunneling circuit with microstrip coupling for high integrability applications is presented. Full design procedure, simulation and experimental results are shown, and a methodology to extract the e®ective permittivity and propagation constants in the tunnel is described. Detailed analysis of the dependence on external quality factor and tunnel to feed height ratio is investigated. Simulation and measurement results of the ENZ tunnel structure are in good agreement. | |
| Progress In Electromagnetics Research C | |
| 2010 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| D. V. B. Murthy, et al., (2010). A novel Epsilon Near Zero (ENZ) tunneling circuit using microstrip technology for high integrability applications, Progress In Electromagnetics Research C, (15): 65-74 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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