Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1491
Noise in micro-bolometers with silicon-germanium thermo-sensing layer
ANDREY KOSAREV
MARIO MORENO MORENO
ALFONSO TORRES JACOME
Sergey N. Rumyantsev
ISMAEL COSME BOLAÑOS
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Silicon-germanium films
Plasma deposition
Electrical properties and measurements
Electronic devices
Low frequency noise in a-SixGey:H thermo-sensing films, on glass and in micro-bolometers of planar and sandwich structures based on the same material has been studied at different temperatures. The noise spectra had the form of the 1/f-like noise with the frequency exponent within the range of 0.8 to 1.6 depending on the sample and temperature. In the temperature range from T = 340 to 400 K the amplitude of the noise and current (at constant voltage) increased. These dependences can be described as a thermal activated process with energies of EaS/I = 0.63 eV and Eafilm = 0.34 eV for relative spectral noise density of the current fluctuations and DC current, respectively.
Elsevier B.V.
2010
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Kosarev, A., et al., (2010). Noise in micro-bolometers with silicon-germanium thermo-sensing layer, Thin Solid Films, (518): 3310–3312
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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