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Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition | |
ROSA ELVIA LOPEZ ESTOPIER MARIANO ACEVES MIJARES ZHENRUI YU CIRO FALCONY GUAJARDO | |
Acceso Abierto | |
Atribución-NoComercial-SinDerivadas | |
Room temperature cathodoluminescence and photoluminescence were used to study silicon rich oxide (SRO) films with 5.5% silicon excess. Intense blue and red luminescence emissions were found. A SRO film was deposited by low-pressure chemical vapor deposition and was annealed at 1100 °C by 3 h in a nitrogen ambient. The emission from the SRO films was modeled as being due to donor-acceptor-pair decay. Calculations have been made to obtain the first estimates of the donor and acceptor energy distributions in SRO films. | |
American Vacuum Society | |
2011 | |
Artículo | |
Inglés | |
Estudiantes Investigadores Público en general | |
López-Estopier, R., et al., (2011). Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition, Journal of Vacuum Science & Technology B, Vol. 29 (2, 21017): 1-5 | |
ELECTRÓNICA | |
Versión aceptada | |
acceptedVersion - Versión aceptada | |
Appears in Collections: | Artículos de Electrónica |
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