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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1684| Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition | |
| ROSA ELVIA LOPEZ ESTOPIER MARIANO ACEVES MIJARES ZHENRUI YU CIRO FALCONY GUAJARDO | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Room temperature cathodoluminescence and photoluminescence were used to study silicon rich oxide (SRO) films with 5.5% silicon excess. Intense blue and red luminescence emissions were found. A SRO film was deposited by low-pressure chemical vapor deposition and was annealed at 1100 °C by 3 h in a nitrogen ambient. The emission from the SRO films was modeled as being due to donor-acceptor-pair decay. Calculations have been made to obtain the first estimates of the donor and acceptor energy distributions in SRO films. | |
| American Vacuum Society | |
| 2011 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| López-Estopier, R., et al., (2011). Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition, Journal of Vacuum Science & Technology B, Vol. 29 (2, 21017): 1-5 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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| 1 Lopez_2011_JVacSciTechnol29.pdf | 3.35 MB | Adobe PDF | Visualizar/Abrir |