Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1684
Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition
ROSA ELVIA LOPEZ ESTOPIER
MARIANO ACEVES MIJARES
ZHENRUI YU
CIRO FALCONY GUAJARDO
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Room temperature cathodoluminescence and photoluminescence were used to study silicon rich oxide (SRO) films with 5.5% silicon excess. Intense blue and red luminescence emissions were found. A SRO film was deposited by low-pressure chemical vapor deposition and was annealed at 1100 °C by 3 h in a nitrogen ambient. The emission from the SRO films was modeled as being due to donor-acceptor-pair decay. Calculations have been made to obtain the first estimates of the donor and acceptor energy distributions in SRO films.
American Vacuum Society
2011
Artículo
Inglés
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Público en general
López-Estopier, R., et al., (2011). Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition, Journal of Vacuum Science & Technology B, Vol. 29 (2, 21017): 1-5
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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