Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1685
On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition
ENRIQUE QUIROGA GONZALEZ
MARIANO ACEVES MIJARES
ZHENRUI YU
ROSA ELVIA LOPEZ ESTOPIER
KARIM MONFIL LEYVA
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Multilayers
Silicon rich oxide
Nanoparticles
Photoluminescence
Low-pressure chemical vapor deposition
Transmission electron microscopy
The photoluminescence emission of multilayer structures composed of layers of silicon rich oxide with high silicon content and layers of silicon rich oxide with low silicon content obtained by low pressure chemical vapor deposition is here presented. Different parameters for the preparation of the multilayers have been varied such as the Si concentration and the thicknesses of the layers. Additionally, the samples were oxidized at different temperatures. For all samples the photoluminescence seems to have the same origin: defects in the oxide matrix and defects at the interfaces between the Si nanocrystals. The structural and compositional properties of the multilayer structures are discussed.
Elsevier B.V.
2011
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Quiroga-González, E., et al., (2011). On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition, Thin Solid Films, (519): 8030–8036
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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