Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1778
Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides
Joel Molina Reyes
ALFONSO TORRES JACOME
Jose Efren Peña Alarcon Peña
Manuel Escobar Aguilar
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Metal-Oxide-Semiconductor
Spin-On-Glass
Silicon dioxide (SiO2)
Gate dielectric
Organic thin films
Fourier-Transform Infrared (FTIR)
Spectroscopy
In this work, the physical, chemical and electrical properties of Metal-Oxide-Semiconductor (MOS) capacitors with Spin-On-Glass (SOG)-based thin films as gate dielectric have been investigated. Experiments of SOG diluted with two different solvents (2-propanol and deionized water) were done in order to reduce the viscosity of the SOG solution so that thinner films (down to ∼20 nm) could be obtained and their general characteristics compared. Thin films of SOG were deposited on silicon by the sol–gel technique and they were thermally annealed using conventional oxidation furnace and Rapid Thermal Processing (RTP) systems within N2 ambient after deposition. SOG dilution using non-organic solvents like deionized water and further annealing (at relatively high temperatures ≥450 ◦C) are important processes intended to reduce the organic content of the films. Fourier-Transform Infrared (FTIR) Spectroscopy results have shown that water-diluted SOG films have a significant reduction in their organic content after increasing annealing temperature and/or dilution percentage when compared to those of undiluted SOG films. Both current–voltage (I–V) and capacitance–voltage (C–V) measurements show better electrical characteristics for SOG-films diluted in deionized water compared to those diluted in 2-propanol (which is an organic solvent). The electrical characteristics of H2O-diluted SOG thin films are very similar to those obtained from high quality thermal oxides so that their application as gate dielectrics in MOS devices is promising. Finally, it has been demonstrated that by reducing the organic content of SOG-based thin films, it is possible to obtain MOS devices with better electrical properties.
Elsevier B.V.
2011
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Molina-Reyes, J., et al., (2011). Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides, Materials Science and Engineering B, (176): 1353– 1358
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

Upload archives


File SizeFormat 
39 Molina_2011_MaterialsEngi176.pdf1.35 MBAdobe PDFView/Open