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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2055| On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition | |
| MARIANO ACEVES MIJARES Roberto Stack Murphy Arteaga | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Silicon Rich Oxide Low-Pressure Chemical LPCVD Vapor Deposition | |
| Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100◦C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy. | |
| Journal of Nanomaterials | |
| 2012-07 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Aceves-Mijares, M., et al., (2012), On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition, Journal of Nanomaterials, Vol. 2012(5):1-12. | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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