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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2056| Influence of Silicon Binding Energy on Photoluminescence of Si-implanted Silicon Dioxide | |
| MARIANO ACEVES MIJARES | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Photo-luminescence Photoelectron Spectroscopy Silicon dioxide films | |
| Studies of photo-luminescence (PL) and X-ray Photoelectron Spectroscopy (XPS) were performed to silicon-rich silicon dioxide films (SRO) fabricated by implantation of Si ions on SiO₂ deposited by plasma enhanced chemical vapor deposition (PECVD). Samples presented PL spectra formed by the contribution of two bands, respectively related to defects and quantum confinement (QC). The XPS results for the different samples presented significant differences in the density and types of Si-Si and Si-O bonds. A relation was observed between the types of Si bonds and the PL characteristics presented by the material, obtaining a modulation of the emission spectra trough the change of the implantation dose. | |
| The Electrochemical Society | |
| 2012 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| González-Fernández, A. A., et al., (2012), Influence of Silicon Binding Energy on Photoluminescence of Si-implanted Silicon Dioxide, The Electrochemical Society, Vol. 49 (1): 307–314. | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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| 6 Aceves_2012_ECSTrans49.pdf | 484.42 kB | Adobe PDF | Visualizar/Abrir |