Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2068
Integration of MOSFET/MIM structures using a CMOS-based technology for pH detection applications with high-sensitivity
Joel Molina Reyes
ALFONSO TORRES JACOME
GUILLERMO ESPINOSA FLORES VERDAD
MARIA TERESA SANZ PASCUAL
Erick Guerrero Rodríguez
BERNI MANOLO PEREZ RAMOS
Acceso Abierto
Atribución-NoComercial-SinDerivadas
ISFET
MOSFET
MIM capacitor
Reference electrode
pH detection
Chemical sensor
CMOS processing.
In this work, we show that by using Metal-Insulator-Metal (MIM) structures integrated in series to the gateof submicron Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices, highly-sensitive and ultra-lowpower consumption pH sensors can be obtained. One MIM capacitor enables external polarization of the MOSFETdevice while a second MIM capacitor is connected to a sensing plate whose surface is whether a thick polyimidelayer or the last metallization level. The electrochemical response of these surfaces to pH buffer solutions resemblesthat of Ion-Sensitive Field-Effect Transistor (ISFET) devices whose pH sensitivity is dependent on the type of surfacematerial being exposed.
Procedia Chemistry
2012
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Molina, J., et al., (2012), Integration of MOSFET/MIM structures using a CMOS-based technology for pH detection applications with high-sensitivity, Procedia Chemistry, Vol. 6:110 - 116.
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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