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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2068| Integration of MOSFET/MIM structures using a CMOS-based technology for pH detection applications with high-sensitivity | |
| Joel Molina Reyes ALFONSO TORRES JACOME GUILLERMO ESPINOSA FLORES VERDAD MARIA TERESA SANZ PASCUAL Erick Guerrero Rodríguez BERNI MANOLO PEREZ RAMOS | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| ISFET MOSFET MIM capacitor Reference electrode pH detection Chemical sensor CMOS processing. | |
| In this work, we show that by using Metal-Insulator-Metal (MIM) structures integrated in series to the gateof submicron Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices, highly-sensitive and ultra-lowpower consumption pH sensors can be obtained. One MIM capacitor enables external polarization of the MOSFETdevice while a second MIM capacitor is connected to a sensing plate whose surface is whether a thick polyimidelayer or the last metallization level. The electrochemical response of these surfaces to pH buffer solutions resemblesthat of Ion-Sensitive Field-Effect Transistor (ISFET) devices whose pH sensitivity is dependent on the type of surfacematerial being exposed. | |
| Procedia Chemistry | |
| 2012 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Molina, J., et al., (2012), Integration of MOSFET/MIM structures using a CMOS-based technology for pH detection applications with high-sensitivity, Procedia Chemistry, Vol. 6:110 - 116. | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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