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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2070| Observation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs | |
| Edmundo Antonio Gutiérrez Domínguez ERIKA PONDIGO DE LOS ANGELES Víctor Hugo Vega González | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Nanoscaled MOSFETs Quantum magnetoconductance | |
| We have measured gate current components off the axis perpendicular to the surface. The measured gate oxide magnetoconductance exhibits a pronounced magnetic asymmetry, which indicates that the gate current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By identifying and monitoring the different gate current axis components, we have enhanced the understanding of the physics for Si–oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices. | |
| IEEE Electron Device Letters | |
| 2012-02 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Gutiérrez-D., E. A., et al., (2012), Observation of Asymmetric Magnetoconductance in Strained 28-nm Si MOSFETs, IEEE Electron Device Letters, Vol. 33(2): 1–3. | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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