Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2094
High-quality spin-on glass-based oxide as a matrix for embedding HfO₂ nanoparticles for metal-oxide-semiconductor capacitors
Joel Molina Reyes
ANA LUZ MUÑOZ ROSAS
Wilfrido Calleja Arriaga
Pedro Rosales Quintero
ALFONSO TORRES JACOME
Acceso Abierto
Atribución-NoComercial-SinDerivadas
High-quality spin-on glass-based oxide
Metal-oxide-semiconductor capacitors
By using a low cost, simple, and reproducible spin-coating method, thin films of SOG (spin-on-glass)-based oxides with electrical characteristics resembling those of a dry thermal oxide have been obtained. The superior electrical characteristics of Metal-Oxide-Semiconductor (MOS) capacitors based on SOG-oxides come from both (1) reducing the organic content of the SOG solutions after dilution with deionized water and (2) passivation of the silicon surface by a thin chemical oxide. Fourier transform infrared spectroscopy analysis shows that the organic content in H₂O-diluted SOG-oxides is reduced compared to undiluted SOG after N₂ annealing. In addition, by chemically embedding HfO₂ nanoparticles (np-HfO₂) to these SOG-based oxides, an effective increase in the accumulation capacitance of MOS capacitors is observed and this is related to the increase in the final dielectric constant of the resulting oxide after annealing so that potential use of SOG as a glass matrix for embedding HfO₂ nanoparticles and produce higher-k oxide materials is demonstrated.
J. Mater Sci.
2012
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Molina, Joel, et al., (2012), High-quality spin-on glass-based oxide as a matrix for embedding HfO₂ nanoparticles for metal-oxide-semiconductor capacitors, J. Mater Sci, Vol. 47:2248–2255.
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

Upload archives


File SizeFormat 
40 Molina_2012_JournalMaterias47-5.pdf696.51 kBAdobe PDFView/Open