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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2096| HfO₂ nanoparticles embedded within a SOG-based oxide matrix as charge trapping layer for SOHOS-type memory applications | |
| Joel Molina Reyes Rafael Ortega Wilfrido Calleja Arriaga Pedro Rosales Quintero CARLOS ZUÑIGA ISLAS ALFONSO TORRES JACOME | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| HfO₂ nanoparticles SOHOS memory Charge trapping Spin-On Glass | |
| In this work, HfO₂ nanoparticles (np-HfO₂) are embedded within an amorphous Spin-On Glass (SOG)-based oxide matrix and used as charge-trapping layer for memory pplications. Following specific thermal treatments, the np-HfO₂ act as charge storage nodes able to retain charge injected after applying a constant gate voltage. A Silicon-Oxide-High-k-Oxide-Silicon (SOHOS)-type memory has been fabricated with the high-k charge-trapping layer containing 5, 10 and 15% of np-HfO₂ concentration within the SOG-oxide matrix. The memory's charge trapping characteristics are quantized by measuring the flat-band voltage (Vfb) shift of SOHOS capacitors after charge injection and then correlated to np-HfO₂ concentration. Since a large memory window has been obtained for our SOHOS memory, the relatively easy injection/annihilation (programming/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge-trapping layer. A very small injected charge density of 1×10⁻⁶ C/cm² shifts Vfb by 100 mV without needing to overstress the dielectric by hot-carrier injection, a usual method in SOHOS memories. In conclusion, using a simple spin-coating method for the charge-trapping layer, wide current memory windows have been obtained in SOHOS-memories and their charge-trapping characteristics are quantized and correlated to the np-HfO₂. concentration. | |
| Journal of Non-Crystalline Solids | |
| 2012 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Molina, J., et al., (2012), HfO₂ nanoparticles embedded within a SOG-based oxide matrix as charge trapping layer for SOHOS-type memory applications, Journal of Non-Crystalline Solids, Vol. 358:2482–2488 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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