Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2097
Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C
Miguel Dominguez
Pedro Rosales Quintero
ALFONSO TORRES JACOME
MARIO MORENO MORENO
Joel Molina Reyes
FRANCISCO JAVIER DE LA HIDALGA WADE
CARLOS ZUÑIGA ISLAS
Wilfrido Calleja Arriaga
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Thin-film transistor
Hydrogenated amorphous
Spin-On Glass
Silicon–germanium
In this paper, we study the ambipolar behavior of a-SiGe:H thin-film transistors fabricated at 200 °C. A sub-threshold slope and an on/off current ratio of 0.34 V/DEC and 10⁵, respectively, were measured for the n-type region, whereas values of 0.15 V/DEC and 10⁴ for were measured for the p-type region. We also obtained the characteristic energies for the deep localized states of the a-SiGe:H film, the flat-band voltages, and threshold voltages among other device parameters for the ambipolar thin-film transistors.
Journal of Non-Crystalline Solids
2012
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Dominguez, Miguel, et al., (2012), Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C, Journal of Non-Crystalline Solids, Vol. 358:2340–2343
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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