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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2101| Deposition and characterization of polymorphous germanium films prepared by low frequency PECVD | |
| MARIO MORENO MORENO ALFONSO TORRES JACOME Pedro Rosales Quintero ANDREY KOSAREV CARLOS ZUÑIGA ISLAS CLAUDIA REYES BETANZO Miguel Dominguez | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Polymorphous Germanium Amorphous Plasma PECVD | |
| In this work we have deposited polymorphous germanium (pm-Ge:H) thin films by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the deposition pressure on the structural and electric characteristics of the films. Atomic force microscopy was used to analyze the surface roughness of the pm-Ge:H films, while transmission electron microscopy was used to observe the cross section. The temperature dependence of conductivity (σ(T)), deposition rate (Vd), activation energy (Ea) and the temperature coefficient of resistance (TCR) were extracted on the pm-Ge:H films deposited at different pressure values. An optimal pressure range was found, in order to produce pm-Ge:H films with high Ea and TCR which are key parameters for thermal detection applications. | |
| Journal of Non-Crystalline Solids | |
| 2012 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Moreno, M., et al., (2012), Deposition and characterization of polymorphous germanium films prepared by low frequency PECVD, Journal of Non-Crystalline Solids, Vol. 358:(17) 2099–2102 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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