Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2101
Deposition and characterization of polymorphous germanium films prepared by low frequency PECVD
MARIO MORENO MORENO
ALFONSO TORRES JACOME
Pedro Rosales Quintero
ANDREY KOSAREV
CARLOS ZUÑIGA ISLAS
CLAUDIA REYES BETANZO
Miguel Dominguez
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Polymorphous
Germanium
Amorphous
Plasma
PECVD
In this work we have deposited polymorphous germanium (pm-Ge:H) thin films by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the deposition pressure on the structural and electric characteristics of the films. Atomic force microscopy was used to analyze the surface roughness of the pm-Ge:H films, while transmission electron microscopy was used to observe the cross section. The temperature dependence of conductivity (σ(T)), deposition rate (Vd), activation energy (Ea) and the temperature coefficient of resistance (TCR) were extracted on the pm-Ge:H films deposited at different pressure values. An optimal pressure range was found, in order to produce pm-Ge:H films with high Ea and TCR which are key parameters for thermal detection applications.
Journal of Non-Crystalline Solids
2012
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Moreno, M., et al., (2012), Deposition and characterization of polymorphous germanium films prepared by low frequency PECVD, Journal of Non-Crystalline Solids, Vol. 358:(17) 2099–2102
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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