Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2102
Study of polymorphous silicon as thermo-sensing film for infrared detectors
MARIO MORENO MORENO
ALFONSO TORRES JACOME
Pedro Rosales Quintero
CARLOS ZUÑIGA ISLAS
CLAUDIA REYES BETANZO
Wilfrido Calleja Arriaga
FRANCISCO JAVIER DE LA HIDALGA WADE
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Polymorphous silicon
Amorphous silicon
Microbolometers
In this work we have deposited and characterized pm-Si:H thin films obtained by plasma deposition. Our aim is to use pm-Si:H as thermo-sensing element for infrared (IR) detectors based on un-cooled microbolometers. We have studied the electrical characteristics of pm-Si:H that are figures of merit important for IR detection, as activation energy, thermal coefficient of resistance (TCR), room temperature conductivity (σRT) and responsivity under IR radiation. The influence of the substrate temperature (200 °C and 300 °C) on the pm-Si:H characteristics has been also studied. Our results shown that pm-Si:H is an excellent candidate to be used as thermo-sensing film for microbolometers, due to its large activation energy and TCR, with an improved σRT.
Materials Science and Engineering B
2012
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Moreno, M., et al., (2012), Study of polymorphous silicon as thermo-sensing film for infrared detectors, Materials Science and Engineering B, Vol. 177(10):756–761
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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