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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2103| High Quality SiO₂ Obtained From diluted SOG for Low Temperature TFT Fabrication Process | |
| Miguel Dominguez ALFONSO TORRES JACOME Pedro Rosales Quintero CLAUDIA REYES BETANZO | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| High Quality SiO₂ Temperature TFT Fabrication LCDs | |
| Currently, the flexible electronics research field is of high interest because of the development of low cost products, such as solar cells and LCDs. Low temperature deposition processes are required in order to use flexible substrates. Nevertheless, the performance of the electronic devices built at temperatures below 350 °C is not as good as in CMOS technology. Thus, physical and electrical properties of semiconductor and insulator materials deposited at these low temperatures must be improved. In this work, characterization of SiO₂ annealed at 200°C obtained from diluted Spin On Glass (SOG) is presented. The optical and electrical characterization showed that the refractive index (n) and dielectric constant (k) values are similar to those of thermally grown SiO₂. TFTs based on a-SiGe:H were fabricated to demonstrate the quality of the dielectric here obtained | |
| ECS Transactions | |
| 2012 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Dominguez J., Miguel A., et al., (2012), High Quality SiO₂ Obtained From diluted SOG for Low Temperature TFT Fabrication Process, ECS Transactions, Vol. 49(1):399-405 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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