Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2103
High Quality SiO₂ Obtained From diluted SOG for Low Temperature TFT Fabrication Process
Miguel Dominguez
ALFONSO TORRES JACOME
Pedro Rosales Quintero
CLAUDIA REYES BETANZO
Acceso Abierto
Atribución-NoComercial-SinDerivadas
High Quality SiO₂
Temperature TFT Fabrication
LCDs
Currently, the flexible electronics research field is of high interest because of the development of low cost products, such as solar cells and LCDs. Low temperature deposition processes are required in order to use flexible substrates. Nevertheless, the performance of the electronic devices built at temperatures below 350 °C is not as good as in CMOS technology. Thus, physical and electrical properties of semiconductor and insulator materials deposited at these low temperatures must be improved. In this work, characterization of SiO₂ annealed at 200°C obtained from diluted Spin On Glass (SOG) is presented. The optical and electrical characterization showed that the refractive index (n) and dielectric constant (k) values are similar to those of thermally grown SiO₂. TFTs based on a-SiGe:H were fabricated to demonstrate the quality of the dielectric here obtained
ECS Transactions
2012
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Dominguez J., Miguel A., et al., (2012), High Quality SiO₂ Obtained From diluted SOG for Low Temperature TFT Fabrication Process, ECS Transactions, Vol. 49(1):399-405
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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