Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2105
Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors
MARIO MORENO MORENO
ALFONSO TORRES JACOME
Pedro Rosales Quintero
ANDREY KOSAREV
CLAUDIA REYES BETANZO
CARLOS ZUÑIGA ISLAS
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Polymorphous
Silicon
Germanium
Amorphous
Microbolometers
In this work we present a comparative study on the electrical characteristics of polymorphous silicon (pm-Si:H) and polymorphous germanium (pm-Ge:H) thin films deposited by low frequency plasma enhanced chemical vapor deposition (LF-PECVD), aiming to use them as thermo sensing elements in uncooled microbolometers. We studied th e effect of the deposition pressure on the film characteristics that are important for IR detection, as the activation energy (Ea), the thermal coefficient of resistance (TCR), the room temperature conductivity (σTR) and the film responsivity with IR radiation. Our results indicate that polymorphous films have advantages over boron doped a-Si:H, material which is currently employed as thermo-sensing element in commercial microbolometer arrays.
Journal of Non-Crystalline Solids
2012
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Moreno, M., et al., (2012), Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors, Journal of Non-Crystalline Solids, Vol. 358(17):2336–2339
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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