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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2105| Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors | |
| MARIO MORENO MORENO ALFONSO TORRES JACOME Pedro Rosales Quintero ANDREY KOSAREV CLAUDIA REYES BETANZO CARLOS ZUÑIGA ISLAS | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Polymorphous Silicon Germanium Amorphous Microbolometers | |
| In this work we present a comparative study on the electrical characteristics of polymorphous silicon (pm-Si:H) and polymorphous germanium (pm-Ge:H) thin films deposited by low frequency plasma enhanced chemical vapor deposition (LF-PECVD), aiming to use them as thermo sensing elements in uncooled microbolometers. We studied th e effect of the deposition pressure on the film characteristics that are important for IR detection, as the activation energy (Ea), the thermal coefficient of resistance (TCR), the room temperature conductivity (σTR) and the film responsivity with IR radiation. Our results indicate that polymorphous films have advantages over boron doped a-Si:H, material which is currently employed as thermo-sensing element in commercial microbolometer arrays. | |
| Journal of Non-Crystalline Solids | |
| 2012 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Moreno, M., et al., (2012), Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors, Journal of Non-Crystalline Solids, Vol. 358(17):2336–2339 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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