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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2119| Modeling Transmission Lines on Silicon in the Frequency and Time Domains from S-Parameters | |
| SVETLANA CARSOF SEJAS GARCIA Reydezel Torres Torres Roberto Stack Murphy Arteaga | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| CPW Skin effect Transmission-line loss | |
| This brief presents the full characterization andmodeling of uniform transmission lines on silicon. It includes the implementation of equivalent circuit models in both the frequency and time domains to perform accurate and causal simulations up to 30 GHz and for rise times in the order of picoseconds, respectively. These models can be directly implemented in SPICE-like simulators to obtain fast and physically based results when working on RFCMOS. | |
| IEEE Transactions on Electron Devices | |
| 2012-06 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Sejas-García, Svetlana C., et al., (2012), Modeling Transmission Lines on Silicon in the Frequency and Time Domains from S-Parameters, IEEE Transactions on Electron Devices, Vol. 59(6):1803–1806 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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| 66 Torres_2012_IEEE59-6.pdf | 460.98 kB | Adobe PDF | Visualizar/Abrir |