Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2122
Optical and compositional properties of amorphous silicon-germanium films by plasma processing for integrated photonics
William Wenceslao Hernández Montero
Ignacio Enrique Zaldívar Huerta
CARLOS ZUÑIGA ISLAS
ALFONSO TORRES JACOME
CLAUDIA REYES BETANZO
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Photonic integrated circuits
Waveguides
Thinfilms, Optical properties
Semiconductor materials
Plasmas
We report the study of hydrogenated amorphous silicon-germanium (a-Si1-xXGex:H) films prepared by low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD) varying the composition (0 ≤ X ≤ 1). Silicon and germanium content is determined by energy dispersion spectroscopy (EDS). Refractive index, absorption coefficient and optical gap are estimated by transmittance measurements as well as by the use of PUMA software. Absorption coefficients obtained by using this software and by the Beer-Lambert law show good agreement according to absorption region. Results indicate that refractive index exhibits a linear behavior on germanium content for atomic percent (at.%). Employing these films and by the use of the finite-element software COMSOL, a single-mode low-contrast rib optical waveguide operating at the wavelength of 1550 nm is simulated, and later fabricated by using photolithography and plasma etching techniques. Measured optical losses are 7.6 dB/cm.
Optical Materials Express
2012-04
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Hernández-Montero,William W., et al., (2012), Optical and compositional properties of amorphous silicon-germanium films by plasma processing for integrated photonics, Optical Materials Express, Vol. 2(4):358–370
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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