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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2318| Chemical and Morphological Characteristics of ALD Al₂O₃ Thin-Film Surfaces after Immersion in pH Buffer Solutions | |
| Joel Molina Reyes BERNI MANOLO PEREZ RAMOS CARLOS ZUÑIGA ISLAS Wilfrido Calleja Arriaga Pedro Rosales Quintero ALFONSO TORRES JACOME | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Morphological properties Thin aluminum oxide film surfaces Atomic Layer Deposition FTIR | |
| The chemical and morphological properties of thin aluminum oxide film surfaces (Al₂O₃ having 10 nm in thickness) in the asdeposited (dry) and after immersion (in pH buffer solutions) conditions were studied. Careful measurement conditions have been followed in order to determine any possible physical and/or chemical change on the surface of these films (after immersion in pH), so that proper correlation to their high and stable sensitivity to pH is possible. After deposition of thin Al₂O₃ films (by Atomic Layer Deposition, ALD) on chemically oxidized p-type silicon wafers, the resulting Al₂O₃/SiOₓ/Si stacked structures were characterized by Fourier-Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) before and after immersion in pH buffer solutions. Also, the Capacitance-Voltage (C-V) and Current-Voltage (I-V) characteristics were obtained after fabrication of Metal-Insulator-Semiconductor (MIS) devices in order to correlate the good chemical and morphological characteristics of thin Al₂O₃ to its electrical properties. Based on the characterization results, low surface oxidation/dissolution mechanisms are found in ALD aluminum oxide films when immersed in pH buffer solutions during short immersion times (immersion time ≤ 10 minutes); therefore, leading to the characteristic slow degradation of the sensitivity to pH for this dielectric material. © 2013 The Electrochemical Society. [DOI: 10.1149/2.060310jes] All rights reserved. | |
| Journal of The Electrochemical Society | |
| 19-07-2013 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Molina Reyes, Joel, et al., (2013), Chemical and Morphological Characteristics of ALD Al₂O₃ Thin-Film Surfaces after Immersion in pH Buffer Solutions, Journal of The Electrochemical Society, Vol. 160(10): B206–B206 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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| 148. Chemical and Morphological Characteristics of ALD Al2O3 Thin Film Surfaces After Immersion in pH Buffer Solutions.pdf | 1.91 MB | Adobe PDF | Visualizar/Abrir |