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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2320| Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C | |
| MARIO MORENO MORENO | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| High-quality Epitaxial silicon Standard radiofrequency | |
| High-quality epitaxial silicon thin films have been deposited by plasma-enhanced chemical vapor deposition (PECVD) at 200 °C in a standard radiofrequency (RF) PECVD reactor. We optimized a silicon tetrafluoride (SiF₄) plasma to clean the surface of <100> crystalline silicon wafers and without breaking vacuum, an epitaxial silicon film was grown from SiF₄, hydrogen (H₂), and argon (Ar) gas mixtures. We demonstrate that the H₂/SiF₄ flow rate ratio is a key parameter to grow high-quality epitaxial silicon films. Moreover, by changing this ratio, we can fine-tune the composition of the interface between the crystalline silicon (c-Si) wafer and the epitaxial film. In this way, at low values of the H₂/SiF₄ flow rate ratio, an abrupt interface is achieved. On the contrary, by increasing this ratio we can obtain a porous and fragile interface layer, composed of hydrogen-rich microcavities, which allows the transfer of the epitaxial film to foreign substrates. | |
| Journal of Materials Research | |
| 14-07-2013 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Moreno, Mario, et al., (2013), Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C, Journal of Materials Research, Vol. 28(13): 1626–1632 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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