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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2323| Modeling and Parameter Extraction of Test Fixtures for MOSFET On-Wafer Measurements up to 60 GHz | |
| GERMAN ANDRES ALVAREZ BOTERO Reydezel Torres Torres Roberto Stack Murphy Arteaga | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| RF-measurements S-parameters Test fixtures Equivalent circuit modeling CMOS devices | |
| We present a circuit model and parameter determination methodology for test fixtures used for on-wafer S-parameter measurements on CMOS devices. The model incorporates the frequency dependence of the series resistances and inductances due to the skin effect occurring in the metal pads. Physically based representations for this effect allow for excellent theory-experiment correlations for different dummy structures, as well as when de-embedding transistor measurements up to 60 GHz. VC 2012 Wiley Periodicals, Inc. IntJ RF and Microwave CAE 23:655–661, 2013. | |
| International Journal of RF and Microwave Computer-Aided Engineering | |
| 01-10-2013 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Alvarez-Botero, German, et al., (2013), Modeling and Parameter Extraction of Test Fixtures for MOSFET On-Wafer Measurements up to 60 GHz, International Journal of RF and Microwave Computer-Aided Engineering, Vol. 23(6): 655–661 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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