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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2354| Prediction of silicon dry etching using a piecewise linear algorithm | |
| CLAUDIA REYES BETANZO | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Silicon etching Piecewise linear Algorithm | |
| A piecewise linear algorithm for predicting silicon etch rates in fluorine-based plasmas is shown. Discrete experimental data of pressure and RF power in reactive ion etching are used to construct a set of local two-dimensional etching functions that serve as a basis for computing numerical solutions (pressure and power values for a specific predicted silicon etch rate). It must be pointed out that, although the algorithm scans the entire data domain, a testing procedure is applied to ensure that the computing task will be invoked only when a solution exists, and otherwise it will be discarded (this avoids brute force methods). In the last step of the algorithm, all solutions are collected and interpolated to construct a solution path. In order to verify the match between the experimental etching results and numerical predictions, the algorithm has been coded and tested using Maple® Release 13.0, showing a successful validation with a difference between experimental data and computed numerical solutions as low as 1% for SF₆, and 4% for SF₆/O₂ in the best case and a root-mean squared error of 0.03. | |
| Journal of the Chinese Institute of Engineers | |
| 15-04-2013 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Jimenez-Fernandez, V.M., et al., (2013), Prediction of silicon dry etching using a piecewise linear algorithm, Journal of the Chinese Institute of Engineers, Vol. 36(7): 941–950 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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