Por favor, use este identificador para citar o enlazar este ítem:
http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/87| Analysis of hot carrier degradation impact on small signal model parameters in nanometric n-MOSFET | |
| DANIEL GARCIA GARCIA | |
| REYDEZEL TORRES TORRES | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Carrier relaxation time Degenerate semiconductors Differential analysers MOSFET | |
| The reliability of sub-100nm MOSFETs due to Hot Carrier Stress becomes a critical topic as the channel length of the transistors shrinks at different rate as the power sources do. Much research has been made in this area from a DC point of view but only a few have analyzed the effect of this degradation in the parameters that constitute the small-signal model. An analysis of the level of hot carrier (HC) degradation caused up to 20 GHz is introduced. The degradation process is done through the application of controlled DC currents at well defines periods of time. The recorded S-parameters before and after DC degradation allows the observation of the corresponding changes in the transmission and reflection features, as well as in the intrinsic channel resistance and the transconductance. | |
| Instituto Nacional de Astrofísica, Óptica y Electrónica | |
| 2015-01 | |
| Tesis de maestría | |
| Inglés | |
| Público en general | |
| Garcia-Garcia D. | |
| ELECTRÓNICA | |
| Aparece en las colecciones: | Maestría en Electrónica |
Cargar archivos:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| GarciaGD.pdf | 4.44 MB | Adobe PDF | Visualizar/Abrir |