Por favor, use este identificador para citar o enlazar este ítem:
http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/900
Study of a Fabrication Process and Characterization of One Dimensional Array of Uncooled Micro-bolometers Based on Germanium Films Deposited by Plasma | |
MARIO MORENO MORENO ANDREY KOSAREV ALFONSO TORRES JACOME ROBERO CARLOS AMBROSIO LAZARO | |
Acceso Abierto | |
Atribución-NoComercial-SinDerivadas | |
In our previous works, we have studied the fabrication process and characterization of single cell micro-bolometers based on germanium thin films deposited by low frequency (LF) PECVD technique at low temperature and fully compatible with the IC fabrication technology. We have demonstrated promising properties of those devices for further development of IR imaging systems [1-2]. In this work, we report the study and characterization of the fabrication process of a lineal array of 32 un-cooled micro-bolometers. We have used surface micro-machining techniques for the array fabrication onto a silicon wafer. The micro-bolometers in the array have a ìbridge typeî configuration. In this case, a SiNx supporting film is suspended 2.5 μm from the substrate by two legs, which form the bridge and provide sufficient thermo-isolation to the thermo-sensing layer. The thermo-sensing layer was deposited on the bridge by using LF PECVD. The a-GexSiy:H film used in this devices showed high activation energy Ea= 0.34 eV, providing high thermal coefficient of resistance, TCR=α=0.043 K-1and improved but still high resistance. We studied the effect of the addition of boron to the a-GexSiy:H film deposition process, for reducing its undesirable high resistance and, the resulting layer (a-GexBySiz:H) is used as thermo-sensing film in the micro-bolometers arrays. The active area of the cell in the array is Ab=70x66 μm2 and the area of the array including interconnection lines and pads is AA=1600x3120 μm2. The temperature dependence of conductivity σ(T), current-voltage characteristics I(U), and spectral noise density have been measured in the array and the main figures of merit such as, responsivity and detectivity have been obtained. | |
Materials Research Society | |
2007 | |
Artículo | |
Inglés | |
Estudiantes Investigadores Público en general | |
Mario Moreno Andrey Kosarev Alfonso Torres Roberto Ambrosio | |
ELECTRÓNICA | |
Versión aceptada | |
acceptedVersion - Versión aceptada | |
Aparece en las colecciones: | Artículos de Electrónica |
Cargar archivos:
Fichero | Tamaño | Formato | |
---|---|---|---|
12_Study of a Fabrication Process _2.pdf | 431.64 kB | Adobe PDF | Visualizar/Abrir |