Please use this identifier to cite or link to this item: http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/902
The physical reason of intense electroluminescence in ITO–Si heterostructures
OLEKSANDR MALIK
Arturo I. Martinez
FRANCISCO JAVIER DE LA HIDALGA WADE
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Indium oxide
Thin film
Silicon
Heterojunction
Electroluminescence
Intense electroluminescence from a spray deposited heavily tin-doped indium oxide (ITO)–n type silicon (Si) heterojunctions, presenting the properties of an induced p–n junction, has been observed. The role of the degenerated n-type ITO film as a good supplier of holes to maintain an inversion layer formed at the silicon interface is discussed. However, the physical mechanism responsible for a significantly higher quantum efficiency of the radiation emission from such structures is not clear. The explanation of this phenomenon, based on the confinement of carriers at the interface due to multi-point contacts between the ITO film and the silicon, is discussed.
Elsevier
Science Direct
2007-04
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Oleksandr Malik
Arturo I. Martinez
F.J. De la Hidalga-W
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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