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Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD
MARIANO ACEVES MIJARES
Acceso Abierto
Atribución-NoComercial-SinDerivadas
Silicon rich oxide
Infrared spectroscopy
XPS
Photoluminescence
A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO–PECVD films, whereas in SRO–LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO–PECVD films contain a higher content of nitrogen than SRO–LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.
Elsevier B.V.
Science Direct
2007
Artículo
Inglés
Estudiantes
Investigadores
Público en general
Morales, A., et al., (2007). Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD, Physica E (38): 54–58
ELECTRÓNICA
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos de Electrónica

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