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http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/976| Optical characterization of silicon rich oxide films | |
| MARIANO ACEVES MIJARES JOSE ALBERTO LUNA LOPEZ | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| Silicon rich oxide Silicon clusters Photoluminescence FTIR XPS EFTEM | |
| Silicon rich oxide (SRO) films with different silicon excess were deposited by low pressure chemical vapor deposition (LPCVD) using SiH4 and N2O as the reactant gasses. A set of SRO films was implanted with silicon ions (SI-SRO). After thermal annealing, SRO and SI-SRO films with low Si excess showed a strong visible photoluminescence (PL) in the 1.4–2.1 eV range, characteristic of silicon nanocrystals (Si-nc’s) formation. For SRO layers, a redshift of the PL peak was only observed by increasing the silicon excess from 4 to 5.1 at. %, no redshift took place when the silicon excess was 12.7 at. %. The SI-SRO films exhibited a similar behaviour. For implanted and non implanted samples, transmission electron microscopy analysis only showed silicon clusters when the silicon excess was higher than 5 at. %. It has been observed that the Si-clusters size was larger as the silicon excess increased and that the Si-clusters density increased when the SRO films were implanted. Therefore, a stronger PL response was observed in the SI-SRO films. The structural and optical properties of SRO and SI-SRO films have been related, suggesting that the emission could be associated to Si-clusters/defects interaction. | |
| Elsevier B.V. Science Direct | |
| 2007-03 | |
| Artículo | |
| Inglés | |
| Estudiantes Investigadores Público en general | |
| Morales-Sánchez, A., et al., (2007). Optical characterization of silicon rich oxide films, Sensors and Actuators A 142 (2008): 12–18 | |
| ELECTRÓNICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Artículos de Electrónica |
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